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| MITSUBISHI SEMICONDUCTOR THYRISTOR CR08AS LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE CR08AS OUTLINE DRAWING Dimensions in mm 4.40.1 1.60.2 1.50.1 2.50.1 1 0.8 MIN 2 3 0.50.07 0.40.07 1.50.1 1.50.1 (Back side) 2 1 T1 TERMINAL 2 T2 TERMINAL 3 GATE TERMINAL 0.4 +0.03 -0.05 3 * IT (AV) ........................................................................ 0.8A * VDRM ..............................................................400V/600V * IGT ......................................................................... 100A APPLICATION Solid state relay, strobe flasher, ignitor, hybrid IC 1 SOT-89 MAXIMUM RATINGS Symbol VRRM VRSM VR (DC) VDRM VD (DC) Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage DC off-state voltage V1 V1 Voltage class 8 (marked "AD") 400 500 320 400 320 12 (marked "AF") 600 720 480 600 480 3.90.3 Unit V V V V V Symbol IT (RMS) IT (AV) ITSM I 2t PGM PG (AV) VFGM VRGM IFGM Tj Tstg -- Parameter RMS on-state current Average on-state current Surge on-state current I2t for fusing Conditions Commercial frequency, sine half wave, 180 conduction, Ta=51CV2 60Hz sine half wave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Ratings 1.26 0.8 10 0.42 0.5 0.1 6 6 0.3 -40 ~ +125 -40 ~ +125 Unit A A A A2s W W V V A C C mg Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Weight Typical value 48 V1. With Gate-to-cathode resistance RGK=1k Feb.1999 MITSUBISHI SEMICONDUCTOR THYRISTOR CR08AS LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Symbol IRRM IDRM VTM VGT VGD IGT IH Rth (j-a) Parameter Repetitive peak reverse current Repetitive peak off-state current On-state voltage Gate trigger voltage Gate non-trigger voltage Gate trigger current Holding current Thermal resistance Test conditions Tj=125C, VRRM applied, RGK=1k Tj=125C, VDRM applied, RGK=1k Ta=25C, ITM=2.5A, instantaneous value Ta=25C, VD=6V, IT=0.1A V4 Tj=125C, VD=1/2VDRM, RGK=1k Tj=25C, VD=6V, IT=0.1A V4 Tj=25C, VD=12V, RGK=1k Junction to ambient V2 Limits Min. -- -- -- -- 0.2 1 -- -- Typ. -- -- -- -- -- -- 1.5 -- Max. 0.5 0.5 1.5 0.8 -- 100 V3 3 65 Unit mA mA V V V A mA C/W V2. Soldering with ceramic plate (25mm x 25mm x t0.7). V3. If special values of IGT are required, choose at least two items from those listed in the table below. (Example: AB, BC) Item IGT (A) A 1 ~ 30 B 20 ~ 50 C 40 ~ 100 The above values do not include the current flowing through the 1k resistance between the gate and cathode. V4. IGT, VGT measurement circuit. A1 IGS 3V DC A3 IGT A2 TUT 6V DC 60 V1 RGK 12 VGT 1k SWITCH SWITCH 1 : IGT measurement SWITCH 2 : VGT measurement (Inner resistance of voltage meter is about 1k) PERFORMANCE CURVES MAXIMUM ON-STATE CHARACTERISTICS 102 7 Ta = 25C 5 3 2 101 7 5 3 2 100 7 5 3 2 10-1 0 1 2 3 4 5 RATED SURGE ON-STATE CURRENT 10 SURGE ON-STATE CURRENT (A) 9 8 7 6 5 4 3 2 1 0 100 2 3 4 5 7 101 2 3 4 5 7 102 ON-STATE CURRENT (A) ON-STATE VOLTAGE (V) CONDUCTION TIME (CYCLES AT 60Hz) Feb.1999 MITSUBISHI SEMICONDUCTOR THYRISTOR CR08AS LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE GATE CHARACTERISTICS 102 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE 100 (%) GATE TRIGGER CURRENT (Tj = tC) GATE TRIGGER CURRENT (Tj = 25C) VFGM = 6V PG(AV) = 0.1W VGT = 0.8V IGT = 100A (Tj = 25C) VGD = 0.2V PGM = 0.5W IFGM = 0.3A GATE CURRENT (mA) GATE VOLTAGE (V) 101 103 7 TYPICAL EXAMPLE 5 3 2 102 7 5 3 2 101 7 5 3 2 100 -40 -20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (C) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO AMBIENT) 100 10-1 10-2 10-2 2 3 5710-12 3 57100 2 3 57101 2 3 57102 2 3 GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE 1.0 GATE TRIGGER VOLTAGE (V) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 ,,,,,,,,,,,,, ,,,,,,,,,,,,, ,,,,,,,,,,,,, ,,,,,,,,,,,,, ,,,,,,,,,,,,, ,,,,,,,,,,,,, ,,,,,,,,,,,,, ,,,,,,,,,,,,, ,,,,,,,,,,,,, DISTRIBUTION TYPICAL EXAMPLE 0 20 40 60 80 100 120 JUNCTION TEMPERATURE (C) TRANSIENT THERMAL IMPEDANCE (C/W) 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 103 7 25 25 t0.7 5 ALUMINUM BOARD 3 WITH SOLDERING 2 102 7 5 3 2 101 7 5 3 2 100 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 TIME (s) 0 -40 -20 AVERAGE POWER DISSIPATION (W) 1.2 1.0 0.8 0.6 0.4 0.2 0 0 360 RESISTIVE, INDUCTIVE LOADS 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 AMBIENT TEMPERATURE (C) MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE HALF WAVE) 1.6 = 30 60 90 120 1.4 180 ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE HALF WAVE) 160 25 25 t0.7 140 ALUMINUM BOARD WITH SOLDERING 360 120 100 80 60 40 20 0 0 = 30 90 180 60 120 RESISTIVE, INDUCTIVE LOADS NATURAL CONVECTION 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A) Feb.1999 MITSUBISHI SEMICONDUCTOR THYRISTOR CR08AS LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE 120 100 80 60 360 NATURAL CONVECTION = 180 65C/W 90C/W AVERAGE POWER DISSIPATION (W) AMBIENT TEMPERATURE (C) ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE HALF WAVE) 160 RESISTIVE, INDUCTIVE 140 LOADS MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE FULL WAVE) 1.6 = 30 60 90 120 1.4 180 1.2 1.0 0.8 0.6 0.4 0.2 0 0 40 20 Rth(j - a) = 200C/W 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 360 RESISTIVE LOADS 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A) AVERAGE POWER DISSIPATION (W) AMBIENT TEMPERATURE (C) ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE FULL WAVE) 160 25 25 t0.7 140 ALUMINUM BOARD WITH SOLDERING 360 120 100 80 60 40 20 0 0 60 120 = 30 90 180 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 RESISTIVE LOADS NATURAL CONVECTION MAXIMUM AVERAGE POWER DISSIPATION (RECTANGULAR WAVE) 1.6 90 180 = 30 60 120 270 1.4 DC 1.2 1.0 0.8 0.6 0.4 0.2 0 0 360 RESISTIVE, INDUCTIVE LOADS 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A) AMBIENT TEMPERATURE (C) BREAKOVER VOLTAGE (Tj = tC) BREAKOVER VOLTAGE (Tj = 25C) ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (RECTANGULAR WAVE) 160 25 25 t0.7 140 ALUMINUM BOARD WITH SOLDERING 360 120 RESISTIVE, 100 INDUCTIVE LOADS 80 NATURAL CONVECTION 60 40 20 0 0 = 30 60 120 270 90 180 DC BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE 100 (%) 160 140 120 100 80 60 40 20 TYPICAL EXAMPLE RGK = 1k 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 -40 -20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (C) AVERAGE ON-STATE CURRENT (A) Feb.1999 MITSUBISHI SEMICONDUCTOR THYRISTOR CR08AS LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE 100 (%) 120 TYPICAL EXAMPLE 100 BREAKOVER VOLTAGE (dv/dt = vV/s ) BREAKOVER VOLTAGE (dv/dt = 1V/s ) 100 (%) BREAKOVER VOLTAGE VS. GATE TO CATHODE RESISTANCE BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE 160 TYPICAL EXAMPLE Tj = 125C RGK = 1k 140 120 100 80 60 40 20 0 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 RATE OF RISE OF OFF-STATE VOLTAGE (V/s) BREAKOVER VOLTAGE (RGK = rk) BREAKOVER VOLTAGE (RGK = 1k) 80 60 40 20 Tj = 125C 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 GATE TO CATHODE RESISTANCE (k) HOLDING CURRENT VS. JUNCTION TEMPERATURE 101 7 DISTRIBUTION TYPICAL EXAMPLE 5 IGT (25C) = 35A 3 2 100 7 5 3 2 10-1 7 5 3 2 HOLDING CURRENT VS. GATE TO CATHODE RESISTANCE 100 (%) 500 TYPICAL EXAMPLE IGT (25C) IH (1k) # 1 25A 0.9mA HOLDING CURRENT (mA) HOLDING CURRENT (RGK = rk) HOLDING CURRENT (RGK = 1k) ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, 400 300 200 #1 100 Tj = 25C 0 -1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 10 GATE TO CATHODE RESISTANCE (k) RGK = 1k 10-2 -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C) HOLDING CURRENT VS. GATE TRIGGER CURRENT 4.0 Tj = 25C HOLDING CURRENT (mA) 3.5 TURN-ON TIME (s) 101 GATE TRIGGER CURRENT (A) 102 3.0 2.5 2.0 1.5 1.0 0.5 0 100 TURN-ON TIME VS. GATE CURRENT 102 VD = 100V 7 TYPICAL EXAMPLE 5 RL = 47 3 RGK = 1k 2 Ta = 25C 101 7 5 3 2 100 7 5 3 2 10-1 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 GATE CURRENT (mA) Feb.1999 MITSUBISHI SEMICONDUCTOR THYRISTOR CR08AS LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE 40 VD = 50V, VR = 50V 35 IT = 2A, RGK = 1k TURN-OFF TIME (s) REPETITIVE PEAK REVERSE VOLTAGE (Tj = tC) REPETITIVE PEAK REVERSE VOLTAGE (Tj = 25C) 100 (%) TURN-OFF TIME VS. JUNCTION TEMPERATURE REPETITIVE PEAK REVERSE VOLTAGE VS. JUNCTION TEMPERATURE 160 TYPICAL EXAMPLE 140 120 100 80 60 40 20 0 -40 -20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (C) 30 25 DISTRIBUTION 20 15 10 5 0 ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, 0 20 40 60 TYPICAL EXAMPLE 80 100 120 140 160 JUNCTION TEMPERATURE (C) GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH THERMAL IMPEDANCE (C/W) THERMAL IMPEDANCE VS. BOARD DIMENSIONS 320 280 240 200 160 120 80 t0.7 40 10x10 EPOXY PLATE ALUMINUM WITH COPPER FOIL BOARD 0 0 10 20 30 40 50 60 70 80 BOARD DIMENSIONS (mm) REGULAR SQUARE ONE SIDE WITHOUT EPOXY PLATE 104 7 5 3 2 103 7 5 3 2 102 7 5 3 2 101 100 2 100 (%) GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) Tj = 25C TYPICAL EXAMPLE IGT (DC) # 1 10A #1 # 2 65A #2 3 4 5 7 101 2 3 4 5 7 102 GATE CURRENT PULSE WIDTH (s) Feb.1999 |
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